Localization to delocalization probed by magnetotransport of hbn/graphene/hbn stacks in the ultra-clean regime
We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures > ~ 40 K, w...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Published: |
Nature Research
2021
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/95617/ http://dx.doi.org/10.1038/s41598-021-98266-4 |
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| Summary: | We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures > ~ 40 K, whereas it becomes positive for low temperatures ≤ ~ 40 K, which implies an interplay of quantum interferences in Dirac materials. The elastic scattering mechanism in hBN/Gr/hBN stacks contrasts with that of conventional graphene on SiO2, and our ultra-clean graphene device shows nonzero magnetoconductance for high temperatures of up to 300 K. |
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