Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics

Half-metallic nanocrystalline magnetite (Fe3O4) thin films, with different thicknesses were developed on polyethylene-terephthalate (PET) substrates, by reactive sputtering at room temperature. Fe3O4 film (200-nm thick)/PET heterostructures possess superior electrical and magnetic characteristics, w...

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Main Authors: Ansari, Mohammad Shahnawaze, Othman, Mohd. Hafiz Dzarfan, Ansari, Mohammad Omaish, Ansari, Sana, Sazali, Norazlianie
Format: Article
Published: Elsevier Ltd 2021
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Online Access:http://eprints.utm.my/id/eprint/94950/
http://dx.doi.org/10.1016/j.mseb.2020.115033
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spelling my.utm.949502022-04-29T22:22:50Z http://eprints.utm.my/id/eprint/94950/ Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics Ansari, Mohammad Shahnawaze Othman, Mohd. Hafiz Dzarfan Ansari, Mohammad Omaish Ansari, Sana Sazali, Norazlianie TP Chemical technology Half-metallic nanocrystalline magnetite (Fe3O4) thin films, with different thicknesses were developed on polyethylene-terephthalate (PET) substrates, by reactive sputtering at room temperature. Fe3O4 film (200-nm thick)/PET heterostructures possess superior electrical and magnetic characteristics, with a Verwey transition temperature (Tv) of ~122 K and a saturation magnetization (Ms) ~ 361 emu/cm3. Furthermore, the antiferromagnetic (AFM)-coupled antiphase boundaries (APBs) controlled the transport properties of the Fe3O4 thin films, due to the tunneling of spin-polarized electrons through the films. Very-high magnetoresistance (MR) value (-8.9%) were observed for H?Film plane, constructed from Fe3O4 (200-nm thick)/PET when H values were below 60 kOe at 300 K. In addition, flexibility tests, to examine resistivity, M-H and MR, were performed using with 90° and 45° bent angles and cyclability experiments were implemented to validate the reproducibility of these characteristics. These outcomes demonstrated that Fe3O4/PET heterostructures may represent a promising candidate for flexible/wearable spintronics. Elsevier Ltd 2021 Article PeerReviewed Ansari, Mohammad Shahnawaze and Othman, Mohd. Hafiz Dzarfan and Ansari, Mohammad Omaish and Ansari, Sana and Sazali, Norazlianie (2021) Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 265 . p. 115033. ISSN 0921-5107 http://dx.doi.org/10.1016/j.mseb.2020.115033
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TP Chemical technology
spellingShingle TP Chemical technology
Ansari, Mohammad Shahnawaze
Othman, Mohd. Hafiz Dzarfan
Ansari, Mohammad Omaish
Ansari, Sana
Sazali, Norazlianie
Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics
description Half-metallic nanocrystalline magnetite (Fe3O4) thin films, with different thicknesses were developed on polyethylene-terephthalate (PET) substrates, by reactive sputtering at room temperature. Fe3O4 film (200-nm thick)/PET heterostructures possess superior electrical and magnetic characteristics, with a Verwey transition temperature (Tv) of ~122 K and a saturation magnetization (Ms) ~ 361 emu/cm3. Furthermore, the antiferromagnetic (AFM)-coupled antiphase boundaries (APBs) controlled the transport properties of the Fe3O4 thin films, due to the tunneling of spin-polarized electrons through the films. Very-high magnetoresistance (MR) value (-8.9%) were observed for H?Film plane, constructed from Fe3O4 (200-nm thick)/PET when H values were below 60 kOe at 300 K. In addition, flexibility tests, to examine resistivity, M-H and MR, were performed using with 90° and 45° bent angles and cyclability experiments were implemented to validate the reproducibility of these characteristics. These outcomes demonstrated that Fe3O4/PET heterostructures may represent a promising candidate for flexible/wearable spintronics.
format Article
author Ansari, Mohammad Shahnawaze
Othman, Mohd. Hafiz Dzarfan
Ansari, Mohammad Omaish
Ansari, Sana
Sazali, Norazlianie
author_facet Ansari, Mohammad Shahnawaze
Othman, Mohd. Hafiz Dzarfan
Ansari, Mohammad Omaish
Ansari, Sana
Sazali, Norazlianie
author_sort Ansari, Mohammad Shahnawaze
title Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics
title_short Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics
title_full Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics
title_fullStr Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics
title_full_unstemmed Large spin-dependent tunneling magnetoresistance in Fe3O4/PET heterostructures developed at room temperature: A promising candidate for flexible and wearable spintronics
title_sort large spin-dependent tunneling magnetoresistance in fe3o4/pet heterostructures developed at room temperature: a promising candidate for flexible and wearable spintronics
publisher Elsevier Ltd
publishDate 2021
url http://eprints.utm.my/id/eprint/94950/
http://dx.doi.org/10.1016/j.mseb.2020.115033
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