Electronic properties of silicene nanoribbons using tight-binding approach
Silicene is envisaged as one of the two-dimensional (2D) materials for future nanoelectronic applications. In addition to its extraordinary electronic properties, it is predicted to be compatible with the silicon (Si) fabrication technology. By using nearest neighbour tight-binding (NNTB) approach,...
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Online Access: | http://eprints.utm.my/id/eprint/90053/1/TanLoongPeng2019_ElectronicPropertiesofSilicene.pdf http://eprints.utm.my/id/eprint/90053/ https://dx.doi.org/10.11591/ijeecs.v19.i1.pp76-84 |
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my.utm.900532021-03-29T05:57:50Z http://eprints.utm.my/id/eprint/90053/ Electronic properties of silicene nanoribbons using tight-binding approach Chuan, M. W. Wong, K. L. Hamzah, A. Alias, N. E. Lim, C. S. Tan, M. L. P. TK Electrical engineering. Electronics Nuclear engineering Silicene is envisaged as one of the two-dimensional (2D) materials for future nanoelectronic applications. In addition to its extraordinary electronic properties, it is predicted to be compatible with the silicon (Si) fabrication technology. By using nearest neighbour tight-binding (NNTB) approach, the electronic properties of zigzag silicene nanoribbons (ZSiNRs) with single vacancy (SV) defects are modelled and simulated. For 4-ZSiNR with L=2, the band structures and density of states (DOS) are computed based on SV incorporated ZSiNRs at varying defect locations. The results show that the SV defect will shift the band structure and increase the peak of DOS while the bandgap remain zero. This work provides a theoretical framework to understand the impact of SV defect which is an inevitable non-ideal effect during the fabrication of silicene nanoribbons (SiNRs). Institute of Advanced Engineering and Science 2019 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/90053/1/TanLoongPeng2019_ElectronicPropertiesofSilicene.pdf Chuan, M. W. and Wong, K. L. and Hamzah, A. and Alias, N. E. and Lim, C. S. and Tan, M. L. P. (2019) Electronic properties of silicene nanoribbons using tight-binding approach. Indonesian Journal of Electrical Engineering and Computer Science, 19 (1). pp. 77-84. ISSN 2502-4752 https://dx.doi.org/10.11591/ijeecs.v19.i1.pp76-84 |
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TK Electrical engineering. Electronics Nuclear engineering Chuan, M. W. Wong, K. L. Hamzah, A. Alias, N. E. Lim, C. S. Tan, M. L. P. Electronic properties of silicene nanoribbons using tight-binding approach |
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Silicene is envisaged as one of the two-dimensional (2D) materials for future nanoelectronic applications. In addition to its extraordinary electronic properties, it is predicted to be compatible with the silicon (Si) fabrication technology. By using nearest neighbour tight-binding (NNTB) approach, the electronic properties of zigzag silicene nanoribbons (ZSiNRs) with single vacancy (SV) defects are modelled and simulated. For 4-ZSiNR with L=2, the band structures and density of states (DOS) are computed based on SV incorporated ZSiNRs at varying defect locations. The results show that the SV defect will shift the band structure and increase the peak of DOS while the bandgap remain zero. This work provides a theoretical framework to understand the impact of SV defect which is an inevitable non-ideal effect during the fabrication of silicene nanoribbons (SiNRs). |
format |
Article |
author |
Chuan, M. W. Wong, K. L. Hamzah, A. Alias, N. E. Lim, C. S. Tan, M. L. P. |
author_facet |
Chuan, M. W. Wong, K. L. Hamzah, A. Alias, N. E. Lim, C. S. Tan, M. L. P. |
author_sort |
Chuan, M. W. |
title |
Electronic properties of silicene nanoribbons using tight-binding approach |
title_short |
Electronic properties of silicene nanoribbons using tight-binding approach |
title_full |
Electronic properties of silicene nanoribbons using tight-binding approach |
title_fullStr |
Electronic properties of silicene nanoribbons using tight-binding approach |
title_full_unstemmed |
Electronic properties of silicene nanoribbons using tight-binding approach |
title_sort |
electronic properties of silicene nanoribbons using tight-binding approach |
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Institute of Advanced Engineering and Science |
publishDate |
2019 |
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http://eprints.utm.my/id/eprint/90053/1/TanLoongPeng2019_ElectronicPropertiesofSilicene.pdf http://eprints.utm.my/id/eprint/90053/ https://dx.doi.org/10.11591/ijeecs.v19.i1.pp76-84 |
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