A study of stoichiometric composition of Ge thermal oxide by X-ray photoelectron spectroscopic depth profiling

• Main Authors: Anisuzzaman, Mohammad, Ab. Manaf, Norani, Saharudin, Suhairi, Yasui, Kanji, Hashim, Abdul Manaf
• Format: Conference or Workshop Item
• Language: English
• Published: 2019
• Subjects: TA Engineering (General). Civil engineering (General)
• Online Access: http://eprints.utm.my/id/eprint/89647/1/MohammadAnisuzzaman2019_AstudyofStoichiometricCompositionofGeThermal.pdf; http://eprints.utm.my/id/eprint/89647/; http://dx.doi.org/10.1016/j.matpr.2018.12.052

The evolution of different oxidation states during thermal oxidation of (100) oriented Ge substrate was investigated with X-ray photoelectron spectroscopic analysis. The thermally grown oxides in the temperature range of 380 to 500°C were found to consist of four different oxidation states of Ge, na...