Effect of gap width on electron transport through quantum point contact in hBN/graphene/hBN in the quantum hall regime

• المؤلفون الرئيسيون: Ahmad, Nurul Fariha, Iwasaki, Takuya, Komatsu, Katsuyoshi, Watanabe, Kenji, Taniguchi, Takashi, Mizuta, Hiroshi, Wakayama, Yutaka, Hashim, Abdul Manaf, Morita, Yoshifumi, Moriyama, Satoshi, Nakaharai, Shu
• التنسيق: مقال
• منشور في: American Institute of Physics Inc. 2019
• الموضوعات: TA Engineering (General). Civil engineering (General)
• الوصول للمادة أونلاين: http://eprints.utm.my/id/eprint/87916/; http://dx.doi.org/10.1063/1.5067296

This study investigates quantized electron transport in high-mobility quantum point contact (QPC) devices in hBN/graphene/hBN in the quantum Hall regime. This study primarily focuses on the effect of the gap width of split gates on edge-channel manipulations, which defines the QPC structure and its...