Effect of gap width on electron transport through quantum point contact in hBN/graphene/hBN in the quantum hall regime

• المؤلفون الرئيسيون: Ahmad, Nurul Fariha, Iwasaki, Takuya, Komatsu, Katsuyoshi, Watanabe, Kenji, Taniguchi, Takashi, Mizuta, Hiroshi, Wakayama, Yutaka, Hashim, Abdul Manaf, Morita, Yoshifumi, Moriyama, Satoshi, Nakaharai, Shu
• التنسيق: مقال
• منشور في: American Institute of Physics Inc. 2019
• الموضوعات: TA Engineering (General). Civil engineering (General)
• الوصول للمادة أونلاين: http://eprints.utm.my/id/eprint/87916/; http://dx.doi.org/10.1063/1.5067296

This study investigates quantized electron transport in high-mobility quantum point contact (QPC) devices in hBN/graphene/hBN in the quantum Hall regime. This study primarily focuses on the effect of the gap width of split gates on edge-channel manipulations, which defines the QPC structure and its electrostatic potential distribution. The quantized conductance is governed by the dynamics of edge channels passing through or backscattered at the QPC, which is controlled by both the top-gate and back-gate biases. The effects of the split-gate gap width and the filling in the QPC on the edge-channel manipulations are experimentally verified. The experimental results are consistent with the theoretical predictions of open/closed configurations of the edge channels around QPC with different gate gap widths.