Optimization of a hydrothermal growth process for low resistance 1d fluorine-doped zinc oxide nanostructures

• Main Authors: Napi, Muhammad L. M., Sultan, S. M., Ismail, Razali, Ahmad, Mohd. K., Chai, G. M. T.
• Format: Article
• Published: Hindawi Limited 2019
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/87436/; http://dx.doi.org/10.1155/2019/4574507

Design of Experiment (DOE) has been used for the optimization of a hydrothermal growth process of one-dimensional fluorine-doped zinc oxide (1D-FZO). Box-Behnken design was used in the DOE which includes three design points on each of the synthesis condition parameters. The condition parameters were the gold sputtering time (10 s, 15 s, and 20 s), hydrothermal reaction time (3 hours, 6.5 hours, and 10 hours), and hydrothermal temperature (50°C, 75°C, and 100°C). This statistical method of DOE was used to study the effects of these hydrothermal conditions on the quality of 1D-FZO produced. Au nanoparticles were used as the catalyst to enable the growth of the 1D-FZO. The XRD and EDX analysis confirmed the formation of polycrystalline FZO with the presence of fluorine, zinc, and oxygen elements. SEM observations indicated that the sputtering time of the Au nanoparticles has significant effect on the morphology and growth process of 1D-FZO. The lowest resistance value of 22.57 Ω was achieved for 1D-FZO grown with the longest Au sputtering time at growth temperature below 100°C.