Wafer-scale fabrication of nitrogen-doped reduced graphene oxide with enhanced quaternary-n for high-performance photodetection
We demonstrated a simple and scalable fabrication route of a nitrogen-doped reduced graphene oxide (N-rGO) photodetector on an 8 in. wafer-scale. The N-rGO was prepared through in situ plasma treatment in an acetylene-ammonia atmosphere to achieve an n-type semiconductor with substantial formation o...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Published: |
American Chemical Society
2019
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/87383/ http://dx.doi.org/10.1021/acsami.8b19043 |
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