Carrier transport of rough-edged doped GNRFETs with metal contacts at various channel widths
Graphene nanoribbons (GNRs) have attracted much attention owing to their exotic electronic properties. However, it is impossible to fabricate GNRs with perfect edges. The edge roughness effect will degrade the performance of the field effect transistor (FET). Therefore, modelling GNR FETs (GNRFETs)...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
Academic Press Inc.
2020
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/86728/ http://dx.doi.org/10.1016/j.spmi.2020.1065480 |
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