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Enhanced gain saturation model of non-linear semiconductor optical amplifiers

This study proposes an enhanced gain saturation model of non-linear semiconductor optical amplifiers (SOAs) by incorporating material-dependent gain compression factor. The rate equations are utilised with the extra gain compression term for Indium-Gallium-Arsenide material-based SOA to account for...

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Main Authors: Kharraz, O. M., Supa'at, A. S. M., Atieh, A., Zamzuri, A. K., Mahdi, M. A.
Format: Article
Published: Institution of Engineering and Technology 2018
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/86603/
http://dx.doi.org/10.1049/iet-opt.2018.5029
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spelling my.utm.866032020-09-30T08:44:00Z http://eprints.utm.my/id/eprint/86603/ Enhanced gain saturation model of non-linear semiconductor optical amplifiers Kharraz, O. M. Supa'at, A. S. M. Atieh, A. Zamzuri, A. K. Mahdi, M. A. TK Electrical engineering. Electronics Nuclear engineering This study proposes an enhanced gain saturation model of non-linear semiconductor optical amplifiers (SOAs) by incorporating material-dependent gain compression factor. The rate equations are utilised with the extra gain compression term for Indium-Gallium-Arsenide material-based SOA to account for the steep relaxation oscillations behaviour of non-linear SOAs. The proposed gain saturation model is verified with experimental results that showed very good agreements with a mean square error of 0.094. Institution of Engineering and Technology 2018 Article PeerReviewed Kharraz, O. M. and Supa'at, A. S. M. and Atieh, A. and Zamzuri, A. K. and Mahdi, M. A. (2018) Enhanced gain saturation model of non-linear semiconductor optical amplifiers. IET Optoelectronics, 12 (6). pp. 263-268. ISSN 1751-8768 http://dx.doi.org/10.1049/iet-opt.2018.5029 DOI:10.1049/iet-opt.2018.5029
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Kharraz, O. M.
Supa'at, A. S. M.
Atieh, A.
Zamzuri, A. K.
Mahdi, M. A.
Enhanced gain saturation model of non-linear semiconductor optical amplifiers
description This study proposes an enhanced gain saturation model of non-linear semiconductor optical amplifiers (SOAs) by incorporating material-dependent gain compression factor. The rate equations are utilised with the extra gain compression term for Indium-Gallium-Arsenide material-based SOA to account for the steep relaxation oscillations behaviour of non-linear SOAs. The proposed gain saturation model is verified with experimental results that showed very good agreements with a mean square error of 0.094.
format Article
author Kharraz, O. M.
Supa'at, A. S. M.
Atieh, A.
Zamzuri, A. K.
Mahdi, M. A.
author_facet Kharraz, O. M.
Supa'at, A. S. M.
Atieh, A.
Zamzuri, A. K.
Mahdi, M. A.
author_sort Kharraz, O. M.
title Enhanced gain saturation model of non-linear semiconductor optical amplifiers
title_short Enhanced gain saturation model of non-linear semiconductor optical amplifiers
title_full Enhanced gain saturation model of non-linear semiconductor optical amplifiers
title_fullStr Enhanced gain saturation model of non-linear semiconductor optical amplifiers
title_full_unstemmed Enhanced gain saturation model of non-linear semiconductor optical amplifiers
title_sort enhanced gain saturation model of non-linear semiconductor optical amplifiers
publisher Institution of Engineering and Technology
publishDate 2018
url http://eprints.utm.my/id/eprint/86603/
http://dx.doi.org/10.1049/iet-opt.2018.5029
_version_ 1680321070047952896
score 13.18916

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