Room temperature growth of half-metallic Fe3O4 thin films on polycarbonate by reactive sputtering: heterostructures for flexible spintronics

Nowadays, there is a huge demand of bendable/stretchable electronic devices because of their remarkable capabilities. With such an aim and inclination towards flexible spintronics devices, half-metallic nanocrystalline Fe3O4 thin films with various thicknesses are grown on flexible polycarbonate (PC...

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Main Authors: Ansari, M. S., Othman, M. H. D., Ansari, M. O., Ansari, S., Yusop, M. Z. M.
Format: Article
Published: Elsevier Ltd. 2020
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Online Access:http://eprints.utm.my/id/eprint/86389/
https://dx.doi.org/10.1016/j.jallcom.2019.152532
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spelling my.utm.863892021-02-28T03:02:12Z http://eprints.utm.my/id/eprint/86389/ Room temperature growth of half-metallic Fe3O4 thin films on polycarbonate by reactive sputtering: heterostructures for flexible spintronics Ansari, M. S. Othman, M. H. D. Ansari, M. O. Ansari, S. Yusop, M. Z. M. TP Chemical technology Nowadays, there is a huge demand of bendable/stretchable electronic devices because of their remarkable capabilities. With such an aim and inclination towards flexible spintronics devices, half-metallic nanocrystalline Fe3O4 thin films with various thicknesses are grown on flexible polycarbonate (PC) substrates by reactive sputtering at room temperature. The structural analysis reveals that as the deposition time increases from ∼165 s to ∼1335 s, the thickness of the film also increases from 50 nm to 400 nm with the size of the grain from ∼12 nm to ∼32 nm, respectively. The X-ray photoelectron spectroscopy (XPS) shows that the films grown on PC substrates are the pure form of Fe3O4 nanostructures. The electrical and magnetic characteristics are studied to illustrate the furtherance of the original belongings of Fe3O4. The Verwey transition temperature (Tv) of ∼127 K, Ms value of ∼317 emu/cm3 and MR -8.3% under H ∥ Film plane below 60 kOe at 300 K for 200 nm thick Fe3O4 film on PC substrate were observed. Additionally, several bending experiments are executed to confirm the retention and adjustability of these properties for such heterostructures. These remarkable results show that Fe3O4/PC heterostructures can be a promising applicant for flexible spintronics. Elsevier Ltd. 2020-03 Article PeerReviewed Ansari, M. S. and Othman, M. H. D. and Ansari, M. O. and Ansari, S. and Yusop, M. Z. M. (2020) Room temperature growth of half-metallic Fe3O4 thin films on polycarbonate by reactive sputtering: heterostructures for flexible spintronics. Journal of Alloys and Compounds, 816 . ISSN 0925-8388 https://dx.doi.org/10.1016/j.jallcom.2019.152532 DOI:10.1016/j.jallcom.2019.152532
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TP Chemical technology
spellingShingle TP Chemical technology
Ansari, M. S.
Othman, M. H. D.
Ansari, M. O.
Ansari, S.
Yusop, M. Z. M.
Room temperature growth of half-metallic Fe3O4 thin films on polycarbonate by reactive sputtering: heterostructures for flexible spintronics
description Nowadays, there is a huge demand of bendable/stretchable electronic devices because of their remarkable capabilities. With such an aim and inclination towards flexible spintronics devices, half-metallic nanocrystalline Fe3O4 thin films with various thicknesses are grown on flexible polycarbonate (PC) substrates by reactive sputtering at room temperature. The structural analysis reveals that as the deposition time increases from ∼165 s to ∼1335 s, the thickness of the film also increases from 50 nm to 400 nm with the size of the grain from ∼12 nm to ∼32 nm, respectively. The X-ray photoelectron spectroscopy (XPS) shows that the films grown on PC substrates are the pure form of Fe3O4 nanostructures. The electrical and magnetic characteristics are studied to illustrate the furtherance of the original belongings of Fe3O4. The Verwey transition temperature (Tv) of ∼127 K, Ms value of ∼317 emu/cm3 and MR -8.3% under H ∥ Film plane below 60 kOe at 300 K for 200 nm thick Fe3O4 film on PC substrate were observed. Additionally, several bending experiments are executed to confirm the retention and adjustability of these properties for such heterostructures. These remarkable results show that Fe3O4/PC heterostructures can be a promising applicant for flexible spintronics.
format Article
author Ansari, M. S.
Othman, M. H. D.
Ansari, M. O.
Ansari, S.
Yusop, M. Z. M.
author_facet Ansari, M. S.
Othman, M. H. D.
Ansari, M. O.
Ansari, S.
Yusop, M. Z. M.
author_sort Ansari, M. S.
title Room temperature growth of half-metallic Fe3O4 thin films on polycarbonate by reactive sputtering: heterostructures for flexible spintronics
title_short Room temperature growth of half-metallic Fe3O4 thin films on polycarbonate by reactive sputtering: heterostructures for flexible spintronics
title_full Room temperature growth of half-metallic Fe3O4 thin films on polycarbonate by reactive sputtering: heterostructures for flexible spintronics
title_fullStr Room temperature growth of half-metallic Fe3O4 thin films on polycarbonate by reactive sputtering: heterostructures for flexible spintronics
title_full_unstemmed Room temperature growth of half-metallic Fe3O4 thin films on polycarbonate by reactive sputtering: heterostructures for flexible spintronics
title_sort room temperature growth of half-metallic fe3o4 thin films on polycarbonate by reactive sputtering: heterostructures for flexible spintronics
publisher Elsevier Ltd.
publishDate 2020
url http://eprints.utm.my/id/eprint/86389/
https://dx.doi.org/10.1016/j.jallcom.2019.152532
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