Graphene as charge storage layer in floating gate flash memory with high-k tunnel barrier engineering

• Main Authors: Alias, Nurul Ezaila, Zainal Abidin, Mastura Shafinaz, Ahmad, M. Hilman, Hamzah, Afiq, Johari, Zaharah, Ismail, Razali
• Format: Conference or Workshop Item
• Published: 2018
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/83528/; http://dx.doi.org/10.1109/SCORED.2018.8710905

This study aims to investigate the memory performances of graphene as a charge storage layer in the floating gate with the different type of high-k materials such as silicon nitride (Si3N4), aluminium oxide (Al2O3), hafnium dioxide (HfO2) and zirconium oxide (ZrO2) using Silvaco ATLAS TCAD Tools. Th...