Carrier relaxation time modelling of monolayer black phosphorene

• Main Authors: Pourasl, A. H., Ahmadi, M. T., Ismail, R.
• Format: Article
• Published: Institution of Engineering and Technology 2017
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/76959/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-85030693636&doi=10.1049%2fmnl.2017.0242&partnerID=40&md5=c1b9fe1cf682c4991c690e95588106b3

Phosphorene as an innovative structure that can be exfoliated similarly to the graphene with a direct, inherent and suitable bandgap presents exceptional prospects for future generations of electronic devices. Phosphorene possess high carrier mobility, therefore, in this work its carrier statistics in the form of monolayer phosphorene in the non-degenerate limit is analytically modelled and the mobility relation with carrier relaxation time is investigated. Energy dispersion relation is used to develop and calculate the required parameters for carrier relaxation time model which is an important parameter in conduction theory. On the other hand, the dependency of carrier velocity and mobility to voltage, normalised Fermi energy and temperature are modelled. Finally, the carrier relaxation time as a function of carrier mobility is modelled and its dependency towards temperature and normalised Fermi energy is discussed. It is shown that the relaxation time is strongly dependent on the carrier mobility which increases by increasing the mobility.