Growth of GaN by nitridation of seed/catalyst free electrodeposited Ga-based compound materials on graphene on insulator
The nitridation of the electrochemically deposited Ga-based compound material on graphene on insulator towards the formation of GaN/graphene hybrid structure was studied by varying the nitridation time and temperature. First, the growth of Ga-based compounds which contains GaON and Ga2O3 on multi-la...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
Elsevier Ltd
2017
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| Online Access: | http://eprints.utm.my/id/eprint/76940/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-85019364064&doi=10.1016%2fj.mssp.2017.05.019&partnerID=40&md5=dce39039e5aaa30eb22611e55e3ff25c |
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