The effect of V/III ratio on the crystal structure of gallium arsenide nanowires

• المؤلفون الرئيسيون: Muhammad, R., Wahab, Y., Ibrahim, Zuhairi, Othaman, Zulkafli, Sakrani, S., Ahamad, R.
• التنسيق: Conference or Workshop Item
• منشور في: 2013
• الموضوعات: TK Electrical engineering. Electronics Nuclear engineering
• الوصول للمادة أونلاين: http://eprints.utm.my/id/eprint/68555/; http://dx.doi.org/10.4028/www.scientific.net/AMR.895.539

Gallium arsenide (GaAs) nanowires were grown vertically on GaAs (111)B substrate by gold particle-assisted using metal-organic chemical vapour deposition. Transmission electron microscopy and X-Ray diffraction analysis were carried out to investigate the effects of V/III ratio and nanowire diameter...