Self-assembled Ge/Si nanoislands: effect of argon flow and radio frequency power
The growth of a germanium-silicon (Ge/Si) heterostructure using radio frequency (rf) magnetron sputtering under optimized conditions is performed. High-density self-assembled Ge nanoislands ∼14 nm in size are obtained directly on Si(100) under 10 sccm argon (Ar) flow and 100 W rf power. The surface...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
IOP Publishing Ltd
2014
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/62548/ http://dx.doi.org/10.1088/0031-8949/89/02/025804 |
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