Dft investigations of the structural and electronic properties of xn (al, ga, in) compounds
Saved in:
Main Authors: | Saeed, Mohammad Alam, Mat Isa, Ahmad Radzi, Alsardia, M. M., Mahmood, Tariq, Islam, S. |
---|---|
Format: | Article |
Published: |
2015
|
Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/60199/ |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
DFT investigations of structural and electronic properties of gallium arsenide (GAAS)
by: Anua, N. Najwa, et al.
Published: (2012) -
Structural, electronic and optical properties of defect chalcopyrite CdGa2S4 and HgGa2S4 compounds by first principles
by: Osman, Norhaslinda, et al.
Published: (2014) -
An improved study of electronic band structure and optical parameters of x-phosphides (x=b, al, ga, in) by modified Becke-Johnson potential
by: Yousaf, Masood, et al.
Published: (2012) -
First-principles study of cubic BxGa1-xN alloys
by: Lachebi, A., et al.
Published: (2008) -
Computational investigation of the structural, elastic, electronic, and thermodynamic properties of chloroperovskites GaXCl3 (X = Be, Ca, or Sr) using DFT framework
by: Radjai, Missoum, et al.
Published: (2024)