Ge nanoislands grown by radio frequency magnetron sputtering: comprehensive investigation of surface morphology and optical properties

The comprehensive investigation of the effect of growth parameters on structural and optical properties of Si-based single layer Ge nanoislands grown via Stranski-Krastanov mechanism employing radio frequency magnetron sputtering due to its high deposition rate, easy procedure, economical cost, and...

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Main Authors: Samavati, Alireza, Mustafa, Mohd. Kamarulzaki, Othaman, Zulkafli, Ghoshal, Sib Krishna
Format: Article
Published: Hindawi Publishing 2015
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Online Access:http://eprints.utm.my/id/eprint/55462/
http://dx.doi.org/10.1155/2015/681242
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spelling my.utm.554622017-02-15T04:55:56Z http://eprints.utm.my/id/eprint/55462/ Ge nanoislands grown by radio frequency magnetron sputtering: comprehensive investigation of surface morphology and optical properties Samavati, Alireza Mustafa, Mohd. Kamarulzaki Othaman, Zulkafli Ghoshal, Sib Krishna QC Physics The comprehensive investigation of the effect of growth parameters on structural and optical properties of Si-based single layer Ge nanoislands grown via Stranski-Krastanov mechanism employing radio frequency magnetron sputtering due to its high deposition rate, easy procedure, economical cost, and safety is carried out. The estimated width and height of Ge nanoislands produced by this technique are in the range of ~8 to ~30 and ~2 to 8 nm, respectively. Varieties parameters are manipulated to optimize the surface morphology and structural and optical behavior of Ge nanoislands. The resulted nanoislands are analyzed using various analytical techniques including atomic force microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, room temperature photoluminescence, and Raman spectroscopy. The optimum parameters for growing high quality samples having high number density and homogenous and small size distribution are found to be 400°C for substrate temperature, 300 sec for deposition time, 10 sccm for Ar flow, and 100 W for radio frequency power. The excellent features of the results suggest that our systematic investigation on the organized growth factors and their effects on surface parameters and photoluminescence emission energy may constitute a basis for the tunable growth of Ge nanoislands (100) nanoislands suitable in nanophotonics Hindawi Publishing 2015 Article PeerReviewed Samavati, Alireza and Mustafa, Mohd. Kamarulzaki and Othaman, Zulkafli and Ghoshal, Sib Krishna (2015) Ge nanoislands grown by radio frequency magnetron sputtering: comprehensive investigation of surface morphology and optical properties. Journal of Nanomaterials, 2015 . ISSN 1687-4110 http://dx.doi.org/10.1155/2015/681242 DOI:10.1155/2015/681242
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic QC Physics
spellingShingle QC Physics
Samavati, Alireza
Mustafa, Mohd. Kamarulzaki
Othaman, Zulkafli
Ghoshal, Sib Krishna
Ge nanoislands grown by radio frequency magnetron sputtering: comprehensive investigation of surface morphology and optical properties
description The comprehensive investigation of the effect of growth parameters on structural and optical properties of Si-based single layer Ge nanoislands grown via Stranski-Krastanov mechanism employing radio frequency magnetron sputtering due to its high deposition rate, easy procedure, economical cost, and safety is carried out. The estimated width and height of Ge nanoislands produced by this technique are in the range of ~8 to ~30 and ~2 to 8 nm, respectively. Varieties parameters are manipulated to optimize the surface morphology and structural and optical behavior of Ge nanoislands. The resulted nanoislands are analyzed using various analytical techniques including atomic force microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, room temperature photoluminescence, and Raman spectroscopy. The optimum parameters for growing high quality samples having high number density and homogenous and small size distribution are found to be 400°C for substrate temperature, 300 sec for deposition time, 10 sccm for Ar flow, and 100 W for radio frequency power. The excellent features of the results suggest that our systematic investigation on the organized growth factors and their effects on surface parameters and photoluminescence emission energy may constitute a basis for the tunable growth of Ge nanoislands (100) nanoislands suitable in nanophotonics
format Article
author Samavati, Alireza
Mustafa, Mohd. Kamarulzaki
Othaman, Zulkafli
Ghoshal, Sib Krishna
author_facet Samavati, Alireza
Mustafa, Mohd. Kamarulzaki
Othaman, Zulkafli
Ghoshal, Sib Krishna
author_sort Samavati, Alireza
title Ge nanoislands grown by radio frequency magnetron sputtering: comprehensive investigation of surface morphology and optical properties
title_short Ge nanoislands grown by radio frequency magnetron sputtering: comprehensive investigation of surface morphology and optical properties
title_full Ge nanoislands grown by radio frequency magnetron sputtering: comprehensive investigation of surface morphology and optical properties
title_fullStr Ge nanoislands grown by radio frequency magnetron sputtering: comprehensive investigation of surface morphology and optical properties
title_full_unstemmed Ge nanoislands grown by radio frequency magnetron sputtering: comprehensive investigation of surface morphology and optical properties
title_sort ge nanoislands grown by radio frequency magnetron sputtering: comprehensive investigation of surface morphology and optical properties
publisher Hindawi Publishing
publishDate 2015
url http://eprints.utm.my/id/eprint/55462/
http://dx.doi.org/10.1155/2015/681242
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score 13.159267