Gate oxide short (gos) defect modeling based on 32 nm CMOS process

• Main Author: Alawey, Sahar Z
• Format: Thesis
• Published: 2014
• Subjects: HV Social pathology. Social and public welfare
• Online Access: http://eprints.utm.my/id/eprint/48455/

Among the wide set of possible failure mechanisms in IC?s, Gate Oxide Short (GOS) defect is and has been a dominant mechanism failure for CMOS IC?s. It is difficult to detect the existence of GOS as it only causes marginal degradation in circuit?s performance due to small leakage current. If GOS occ...