Excitonic contribution of nanosilicon on light emitting properties
A phenomenological model is developed by integrating the effect of excitonic energy states, localized surface states and quantum confin ement (QC) to obtain an analytical expression for the room temperature photoluminescence (PL) intensity. We calculate the binding energy of strongly confined exc...
Saved in:
Main Authors: | Ghoshal, Sib Krishna, Sahar, Md. Rahim, Rohani, M. S. |
---|---|
Format: | Article |
Published: |
2012
|
Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/46950/ http://dx.doi.org/10.4028/www.scientific.net/AMR.364.308 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Excitonic contribution on light emitting properties of nanosilicon
by: Ghoshal, Sib Krishna, et al.
Published: (2011) -
Effects of exciton-polariton on Mach-Zehnder interference devices
by: Arith, Faiz, et al.
Published: (2014) -
A review of leakage current mechanism in nitride based light emitting diode
by: Hedzir, Anati Syahirah, et al.
Published: (2016) -
Modelling of the Light Emitting Diode (LED) Heating/Cooling Process
by: Loo, Chee Meng
Published: (2015) -
A model for enhanced up-conversion luminescence in erbium-doped tellurite glass containing silver nanoparticles
by: Ghoshal, Sib Krishna, et al.
Published: (2012)