DFT investigations of structural and electronic properties of gallium arsenide (GAAS)

First principles calculations for structural and electronic properties of GaAs have been reported using a full potential linearized augmented plane wave (FP-LAPW) scheme of calculations developed within density functional theory (DFT). We use in this study local density approximation (LDA), Perdew-B...

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Bibliographic Details
Main Authors: Anua, N. Najwa, Ahmed, Rashid, Saeed, Mohammad Alam, Shaari, Amiruddin, Ul Haq, Bakhtiar
Format: Article
Published: 2012
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Online Access:http://eprints.utm.my/id/eprint/46812/
http://dx.doi.org/10.1063/1.4757439
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