An alternative method to grow GE thin films on SI by electrochemical deposition for photonic applications
Germanium films several micrometers in thickness were electrochemically deposited on silicon wafers for the first time without catalysts and at room temperature from a solution containing Ge species that have been electrochemically dissolved from Ge target. The films were investigated using scanning...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Published: |
2012
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/46577/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|