The sub-band effect on the graphene nanoribbon based field-effect transistor

• Main Authors: Kiat, Wong King, Ahmadi, Mohammad Taghi, Ismail, Razali
• Format: Article
• Published: American Scientific Publishers 2012
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/33901/; http://dx.doi.org/10.1166/jno.2012.1323

Graphene, a single-sheet layer of graphite hold interesting property such as high electron mobility. Such characteristic is desired in the transistor manufacturing. However pure graphene is not suitable to be directly used in manufacturing of transistor. This problem is been solved by introducing graphene nanoribbon where the chemical structure of graphene is been manipulating into nanoribbon. Although graphene nanoribbon is believed that can be used to replace the current silicon technology on transistor manufacturing, some uncertainties still exist in it, especially when the width of the ribbon becomes small. Research has shown that when the width of the ribbon is small, the sub-band effect becomes more significant. Therefore this paper will show the study of mobility and carrier velocity at different sub-bands under the condition of varying the gate voltage. Besides that, the study of mobility and carrier velocity at different sub-bands with different width will also be shown in this paper. The first sub-band always shows the highest value of mobility and carrier velocity. When gate voltage is increasing, mobility and carrier velocity are increased. For different width value, the larger the width, the larger the mobility and carrier velocity value is reported.