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Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition

Silicon nanowires (SiNWs) were synthesized from pure silane precursor gas and Au nanoparticles catalyst at below Au-Si eutectic temperature. The SiNWs were grown onto Si (1 1 1) substrates using very high frequency plasma enhanced chemical vapor deposition via a vapor-solid-solid mechanism at temper...

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Main Authors: Wahab, Yussof, Othaman, Zulkafli, Ismail, Abd. Khamim, Hamidinezhad, Habib
格式: Article
出版: Elsevier 2011
主题:
TP Chemical technology
在线阅读:http://eprints.utm.my/id/eprint/29417/
http://dx.doi.org/10.1016/j.apsusc.2011.05.130
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spelling my.utm.294172022-02-28T13:26:00Z http://eprints.utm.my/id/eprint/29417/ Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition Wahab, Yussof Othaman, Zulkafli Ismail, Abd. Khamim Hamidinezhad, Habib TP Chemical technology Silicon nanowires (SiNWs) were synthesized from pure silane precursor gas and Au nanoparticles catalyst at below Au-Si eutectic temperature. The SiNWs were grown onto Si (1 1 1) substrates using very high frequency plasma enhanced chemical vapor deposition via a vapor-solid-solid mechanism at temperatures ranging from 363 to 230 degrees C. The morphology of the synthesized SiNWs was characterized by means of field emission scanning electron microscope equipped with energy dispersive X-ray, high resolution transmission electron microscopy, X-ray diffraction technique and Raman spectroscope. Results demonstrated that the SiNWs can be grown at the temperature as low as 250 degrees C. In addition, it was revealed that the grown wires were silicon-crystallized. Elsevier 2011-08-15 Article PeerReviewed Wahab, Yussof and Othaman, Zulkafli and Ismail, Abd. Khamim and Hamidinezhad, Habib (2011) Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition. Applied Surface Science, 257 (21). pp. 9188-9192. ISSN 0169-4332 http://dx.doi.org/10.1016/j.apsusc.2011.05.130 DOI:10.1016/j.apsusc.2011.05.130
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TP Chemical technology
spellingShingle TP Chemical technology
Wahab, Yussof
Othaman, Zulkafli
Ismail, Abd. Khamim
Hamidinezhad, Habib
Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition
description Silicon nanowires (SiNWs) were synthesized from pure silane precursor gas and Au nanoparticles catalyst at below Au-Si eutectic temperature. The SiNWs were grown onto Si (1 1 1) substrates using very high frequency plasma enhanced chemical vapor deposition via a vapor-solid-solid mechanism at temperatures ranging from 363 to 230 degrees C. The morphology of the synthesized SiNWs was characterized by means of field emission scanning electron microscope equipped with energy dispersive X-ray, high resolution transmission electron microscopy, X-ray diffraction technique and Raman spectroscope. Results demonstrated that the SiNWs can be grown at the temperature as low as 250 degrees C. In addition, it was revealed that the grown wires were silicon-crystallized.
format Article
author Wahab, Yussof
Othaman, Zulkafli
Ismail, Abd. Khamim
Hamidinezhad, Habib
author_facet Wahab, Yussof
Othaman, Zulkafli
Ismail, Abd. Khamim
Hamidinezhad, Habib
author_sort Wahab, Yussof
title Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition
title_short Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition
title_full Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition
title_fullStr Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition
title_full_unstemmed Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition
title_sort synthesis and analysis of silicon nanowire below si-au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition
publisher Elsevier
publishDate 2011
url http://eprints.utm.my/id/eprint/29417/
http://dx.doi.org/10.1016/j.apsusc.2011.05.130
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score 13.250246

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