The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a)
High temperature operation and long term stability are important requirements for gas sensor. The response of Pt-circular Schottky diodes fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure to hydrogen gas at various temperatures, ranging from 25 to 200°C has been inve...
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my.utm.265632018-10-31T12:30:22Z http://eprints.utm.my/id/eprint/26563/ The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a) Mohamad, Mazuina Mustafa, Farahiyah Abd. Rahman, Shaharin Fadzli Zainal Abidin, Mastura Shafinaz Al-Obaidi, N. K. A. Hashim, Abd. Manaf Abdul Aziz, Azlan Hashim, Md. Roslan TK Electrical engineering. Electronics Nuclear engineering High temperature operation and long term stability are important requirements for gas sensor. The response of Pt-circular Schottky diodes fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure to hydrogen gas at various temperatures, ranging from 25 to 200°C has been investigated. A 5 nm-thick of catalytic Pt Schottky contact is formed by electron beam evaporation. Both forward and reverse currents of the device increase upon exposing to hydrogen gas. Although a slight change of forward and reverse current is obtained at room temperature upon exposure to hydrogen but both currents drastically increase with the increase of temperatures. The time-transient characteristics show the average current increment and decrement speed of 27.6 and 17.6 nA sec-1, respectively at constant forward bias of 1 V and temperature of 200°C. Asian Network for Scientific Information 2010 Article PeerReviewed Mohamad, Mazuina and Mustafa, Farahiyah and Abd. Rahman, Shaharin Fadzli and Zainal Abidin, Mastura Shafinaz and Al-Obaidi, N. K. A. and Hashim, Abd. Manaf and Abdul Aziz, Azlan and Hashim, Md. Roslan (2010) The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a). Journal of Applied Sciences, 10 (16). 1797 -1801. ISSN 1812-5654 http://scialert.net/abstract/?doi=jas.2010.1797.1801 DOI:10.3923/jas.2010.1797.1801 |
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TK Electrical engineering. Electronics Nuclear engineering Mohamad, Mazuina Mustafa, Farahiyah Abd. Rahman, Shaharin Fadzli Zainal Abidin, Mastura Shafinaz Al-Obaidi, N. K. A. Hashim, Abd. Manaf Abdul Aziz, Azlan Hashim, Md. Roslan The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a) |
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High temperature operation and long term stability are important requirements for gas sensor. The response of Pt-circular Schottky diodes fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure to hydrogen gas at various temperatures, ranging from 25 to 200°C has been investigated. A 5 nm-thick of catalytic Pt Schottky contact is formed by electron beam evaporation. Both forward and reverse currents of the device increase upon exposing to hydrogen gas. Although a slight change of forward and reverse current is obtained at room temperature upon exposure to hydrogen but both currents drastically increase with the increase of temperatures. The time-transient characteristics show the average current increment and decrement speed of 27.6 and 17.6 nA sec-1, respectively at constant forward bias of 1 V and temperature of 200°C. |
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Mohamad, Mazuina Mustafa, Farahiyah Abd. Rahman, Shaharin Fadzli Zainal Abidin, Mastura Shafinaz Al-Obaidi, N. K. A. Hashim, Abd. Manaf Abdul Aziz, Azlan Hashim, Md. Roslan |
author_facet |
Mohamad, Mazuina Mustafa, Farahiyah Abd. Rahman, Shaharin Fadzli Zainal Abidin, Mastura Shafinaz Al-Obaidi, N. K. A. Hashim, Abd. Manaf Abdul Aziz, Azlan Hashim, Md. Roslan |
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Mohamad, Mazuina |
title |
The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a) |
title_short |
The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a) |
title_full |
The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a) |
title_fullStr |
The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a) |
title_full_unstemmed |
The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a) |
title_sort |
sensing performance of hydrogen gas sensor utilizing undoped-algan/gan hemt (a) |
publisher |
Asian Network for Scientific Information |
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2010 |
url |
http://eprints.utm.my/id/eprint/26563/ http://scialert.net/abstract/?doi=jas.2010.1797.1801 |
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1643647795570147328 |
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13.18916 |