Fabrication of Pt-circular schottky diode on undoped AlGaN/GaN HEMT
In this study, Pt-circular Schottky diode is successfully fabricated for gas sensor application. The fabricated Schottky diode shows good rectification characteristics. The device which shows improvement in term of wiring connection for electrical characterization is fabricated. The DC I-V curves of...
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my.utm.261532018-11-30T06:23:03Z http://eprints.utm.my/id/eprint/26153/ Fabrication of Pt-circular schottky diode on undoped AlGaN/GaN HEMT Mohamad, M. Mustafa, F. Hashim, Abdul Manaf Abd. Rahman, Shaharin Fadzli Aziz, A. A. Hashim, M. R. TK Electrical engineering. Electronics Nuclear engineering In this study, Pt-circular Schottky diode is successfully fabricated for gas sensor application. The fabricated Schottky diode shows good rectification characteristics. The device which shows improvement in term of wiring connection for electrical characterization is fabricated. The DC I-V curves of fabricated Schottky diodes show low series resistance of 210 O and 330 O. The Schottky barrier height (SBH) in the range of 0.458-0.708 eV are experimentally obtained and the discrepancy with the calculated SBH is discussed. A measurement setup that has a capability to allow measurement at high temperature, high hydrogen gas density and low vacuum pressure is also presented. The fabricated device is expected to be suitable for gas sensing application. Science Alert 2010 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/26153/1/MMohamad2010_FabricationofPtCircularSchottkyDiode.pdf Mohamad, M. and Mustafa, F. and Hashim, Abdul Manaf and Abd. Rahman, Shaharin Fadzli and Aziz, A. A. and Hashim, M. R. (2010) Fabrication of Pt-circular schottky diode on undoped AlGaN/GaN HEMT. Journal of Applied Sciences, 10 (19). 2338 -2342. ISSN 1812-5654 http://scialert.net/abstract/?doi=jas.2010.2338.2342 DOI:10.3923/jas.2010.2338.2342 |
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TK Electrical engineering. Electronics Nuclear engineering Mohamad, M. Mustafa, F. Hashim, Abdul Manaf Abd. Rahman, Shaharin Fadzli Aziz, A. A. Hashim, M. R. Fabrication of Pt-circular schottky diode on undoped AlGaN/GaN HEMT |
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In this study, Pt-circular Schottky diode is successfully fabricated for gas sensor application. The fabricated Schottky diode shows good rectification characteristics. The device which shows improvement in term of wiring connection for electrical characterization is fabricated. The DC I-V curves of fabricated Schottky diodes show low series resistance of 210 O and 330 O. The Schottky barrier height (SBH) in the range of 0.458-0.708 eV are experimentally obtained and the discrepancy with the calculated SBH is discussed. A measurement setup that has a capability to allow measurement at high temperature, high hydrogen gas density and low vacuum pressure is also presented. The fabricated device is expected to be suitable for gas sensing application. |
format |
Article |
author |
Mohamad, M. Mustafa, F. Hashim, Abdul Manaf Abd. Rahman, Shaharin Fadzli Aziz, A. A. Hashim, M. R. |
author_facet |
Mohamad, M. Mustafa, F. Hashim, Abdul Manaf Abd. Rahman, Shaharin Fadzli Aziz, A. A. Hashim, M. R. |
author_sort |
Mohamad, M. |
title |
Fabrication of Pt-circular schottky diode on undoped AlGaN/GaN HEMT |
title_short |
Fabrication of Pt-circular schottky diode on undoped AlGaN/GaN HEMT |
title_full |
Fabrication of Pt-circular schottky diode on undoped AlGaN/GaN HEMT |
title_fullStr |
Fabrication of Pt-circular schottky diode on undoped AlGaN/GaN HEMT |
title_full_unstemmed |
Fabrication of Pt-circular schottky diode on undoped AlGaN/GaN HEMT |
title_sort |
fabrication of pt-circular schottky diode on undoped algan/gan hemt |
publisher |
Science Alert |
publishDate |
2010 |
url |
http://eprints.utm.my/id/eprint/26153/1/MMohamad2010_FabricationofPtCircularSchottkyDiode.pdf http://eprints.utm.my/id/eprint/26153/ http://scialert.net/abstract/?doi=jas.2010.2338.2342 |
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