Design approach for tunable CMOS active inductor
A design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GHz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Act...
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| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2004
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/1891/1/SharmanAbuAzmi2004_DesignApproachForTunableCMOS.pdf http://eprints.utm.my/id/eprint/1891/ |
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| Summary: | A design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GHz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Active Inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from lOnH - 6OnH and 20 - 60 respectively. Furthermore, a new technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area. |
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