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Off-state leakage current variations in MOSFET mismatch modeling for circuit simulations

MOSFET is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals.

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Bibliographic Details
Main Authors: Ismail, Muhamad Amri, Md. Nasir, Iskhandar, Ismail, Razali
Format: Conference or Workshop Item
Published: 2007
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/14253/
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id my.utm.14253
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spelling my.utm.142532017-08-03T01:12:01Z http://eprints.utm.my/id/eprint/14253/ Off-state leakage current variations in MOSFET mismatch modeling for circuit simulations Ismail, Muhamad Amri Md. Nasir, Iskhandar Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering MOSFET is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. 2007 Conference or Workshop Item PeerReviewed Ismail, Muhamad Amri and Md. Nasir, Iskhandar and Ismail, Razali (2007) Off-state leakage current variations in MOSFET mismatch modeling for circuit simulations. In: IEEE Regional Symposium on Microelectronics (RSM2007), 2007, Penang.
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Ismail, Muhamad Amri
Md. Nasir, Iskhandar
Ismail, Razali
Off-state leakage current variations in MOSFET mismatch modeling for circuit simulations
description MOSFET is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals.
format Conference or Workshop Item
author Ismail, Muhamad Amri
Md. Nasir, Iskhandar
Ismail, Razali
author_facet Ismail, Muhamad Amri
Md. Nasir, Iskhandar
Ismail, Razali
author_sort Ismail, Muhamad Amri
title Off-state leakage current variations in MOSFET mismatch modeling for circuit simulations
title_short Off-state leakage current variations in MOSFET mismatch modeling for circuit simulations
title_full Off-state leakage current variations in MOSFET mismatch modeling for circuit simulations
title_fullStr Off-state leakage current variations in MOSFET mismatch modeling for circuit simulations
title_full_unstemmed Off-state leakage current variations in MOSFET mismatch modeling for circuit simulations
title_sort off-state leakage current variations in mosfet mismatch modeling for circuit simulations
publishDate 2007
url http://eprints.utm.my/id/eprint/14253/
_version_ 1643646360387321856
score 13.188404

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