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Design approach for tune able CMOS active inductor

Design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GRz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Activ...

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Main Authors: Rafiq, Sharman, Abu Khari, A'ain, Mohd., Azmi, Huang, Min Zhe
Other Authors: Majlis, BY
Format: Book Section
Published: IEEE 2004
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/12123/
http://dx.doi.org/10.1109/SMELEC.2004.1620856
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spelling my.utm.121232011-07-19T10:07:26Z http://eprints.utm.my/id/eprint/12123/ Design approach for tune able CMOS active inductor Rafiq, Sharman Abu Khari, A'ain Mohd., Azmi Huang, Min Zhe TK Electrical engineering. Electronics Nuclear engineering Design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GRz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Active Inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from 10nH - 60nH and 20 - 60 respectively. Furthermore, a new technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area. IEEE Majlis, BY Shaari, S 2004-12-07 Book Section PeerReviewed Rafiq, Sharman and Abu Khari, A'ain and Mohd., Azmi and Huang, Min Zhe (2004) Design approach for tune able CMOS active inductor. In: Proceedings 2004 IEEE International Conference on Semiconductor Electronics. IEEE, USA, pp. 143-147. ISBN 0-7803-8658-2 http://dx.doi.org/10.1109/SMELEC.2004.1620856 doi:10.1109/SMELEC.2004.1620856
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Rafiq, Sharman
Abu Khari, A'ain
Mohd., Azmi
Huang, Min Zhe
Design approach for tune able CMOS active inductor
description Design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GRz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Active Inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from 10nH - 60nH and 20 - 60 respectively. Furthermore, a new technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area.
author2 Majlis, BY
author_facet Majlis, BY
Rafiq, Sharman
Abu Khari, A'ain
Mohd., Azmi
Huang, Min Zhe
format Book Section
author Rafiq, Sharman
Abu Khari, A'ain
Mohd., Azmi
Huang, Min Zhe
author_sort Rafiq, Sharman
title Design approach for tune able CMOS active inductor
title_short Design approach for tune able CMOS active inductor
title_full Design approach for tune able CMOS active inductor
title_fullStr Design approach for tune able CMOS active inductor
title_full_unstemmed Design approach for tune able CMOS active inductor
title_sort design approach for tune able cmos active inductor
publisher IEEE
publishDate 2004
url http://eprints.utm.my/id/eprint/12123/
http://dx.doi.org/10.1109/SMELEC.2004.1620856
_version_ 1643645865763536896
score 13.160551

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