Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method

• Main Authors: Raship, Nur Amaliyana, Mohd Tawil, Siti Nooraya, Nayan, Nafarizal, Ismail, Khadijah
• Format: Article
• Language: English
• Published: Mdpi 2023
• Subjects: T Technology (General)
• Online Access: http://eprints.uthm.edu.my/10142/1/J16304_9a334b81fda31f7f7111e5f60fb92743.pdf; http://eprints.uthm.edu.my/10142/; https://doi.org/10.3390/ma16062392

Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering method. The structural and optical properties of the Gd-doped ZnO films were studied as a function of different Al doping...