Electrosynthesized NiS2 thin films and their optical and semiconductor studies
Nickel sulfide thin films were prepared using electrodeposition on indium tin oxide-coated glass substrates. Films were characterized using X-ray diffraction for crystallographic analysis. The films were shown to be polycrystalline in nature with good uniformity. From scanning electron micrographs,...
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my.utem.eprints.91432015-05-28T04:01:47Z http://eprints.utem.edu.my/id/eprint/9143/ Electrosynthesized NiS2 thin films and their optical and semiconductor studies T., Joseph Sahaya Anand Rajes, KM Rajan Mohd Zaidan , Abdul Aziz TJ Mechanical engineering and machinery Nickel sulfide thin films were prepared using electrodeposition on indium tin oxide-coated glass substrates. Films were characterized using X-ray diffraction for crystallographic analysis. The films were shown to be polycrystalline in nature with good uniformity. From scanning electron micrographs, the surface appeared to be comparatively granular with irregularly shaped grains. From optical analysis, the bandgap range was between 1.22 eV and 1.15 eV with an indirect bandgap nature. Mott-Schottky plot confirmed that the films were found to be n-type, and the semiconductor parameters of the film were derived. Dove Press 2013-04-05 Article PeerReviewed application/pdf en http://eprints.utem.edu.my/id/eprint/9143/1/29_RiE_3.pdf T., Joseph Sahaya Anand and Rajes, KM Rajan and Mohd Zaidan , Abdul Aziz (2013) Electrosynthesized NiS2 thin films and their optical and semiconductor studies. Reports in Electrochemistry, 3. pp. 25-29. ISSN 2230-4096 http://www.dovepress.com/reports-in-electrochemistry-journal http://dx.doi.org/10.2147/RIE.S47068 |
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TJ Mechanical engineering and machinery T., Joseph Sahaya Anand Rajes, KM Rajan Mohd Zaidan , Abdul Aziz Electrosynthesized NiS2 thin films and their optical and semiconductor studies |
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Nickel sulfide thin films were prepared using electrodeposition on indium tin oxide-coated glass substrates. Films were characterized using X-ray diffraction for crystallographic analysis. The films were shown to be polycrystalline in nature with good uniformity. From scanning electron micrographs, the surface appeared to be comparatively granular with irregularly shaped grains. From optical analysis, the bandgap range was between 1.22 eV and 1.15 eV with an indirect bandgap nature. Mott-Schottky plot confirmed that the films were found to be n-type, and the semiconductor parameters of the film were derived. |
format |
Article |
author |
T., Joseph Sahaya Anand Rajes, KM Rajan Mohd Zaidan , Abdul Aziz |
author_facet |
T., Joseph Sahaya Anand Rajes, KM Rajan Mohd Zaidan , Abdul Aziz |
author_sort |
T., Joseph Sahaya Anand |
title |
Electrosynthesized NiS2 thin films and their optical and semiconductor studies |
title_short |
Electrosynthesized NiS2 thin films and their optical and semiconductor studies |
title_full |
Electrosynthesized NiS2 thin films and their optical and semiconductor studies |
title_fullStr |
Electrosynthesized NiS2 thin films and their optical and semiconductor studies |
title_full_unstemmed |
Electrosynthesized NiS2 thin films and their optical and semiconductor studies |
title_sort |
electrosynthesized nis2 thin films and their optical and semiconductor studies |
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Dove Press |
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2013 |
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http://eprints.utem.edu.my/id/eprint/9143/1/29_RiE_3.pdf http://eprints.utem.edu.my/id/eprint/9143/ http://www.dovepress.com/reports-in-electrochemistry-journal http://dx.doi.org/10.2147/RIE.S47068 |
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