5.8 GHz Radio Frequency Amplifier with 3 dB Π Network Attenuator
This paper presents a design of radio frequency amplifier (RFA), which operates at 5.8 GHz frequency for WiMAX application. The RFA designed used T matching network consist of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this pro...
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my.utem.eprints.68562015-05-28T03:45:38Z http://eprints.utem.edu.my/id/eprint/6856/ 5.8 GHz Radio Frequency Amplifier with 3 dB Π Network Attenuator Othman , A. R Hamidon , A. H Abdul Wasli., C, Ting, J. T. H, Mustaffa , M. F Q Science (General) This paper presents a design of radio frequency amplifier (RFA), which operates at 5.8 GHz frequency for WiMAX application. The RFA designed used T matching network consist of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contributes a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth measures is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc. 2010-06-11 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utem.edu.my/id/eprint/6856/1/5.8_GHz_Radio_Frequency_Amplifier_with_3_dB_Pi_Network_Attenuator_.pdf Othman , A. R and Hamidon , A. H and Abdul Wasli., C, and Ting, J. T. H, and Mustaffa , M. F (2010) 5.8 GHz Radio Frequency Amplifier with 3 dB Π Network Attenuator. In: 2010 Indonesia-Malaysia Microwave-Antennas Conference (IMMAC 2010), 11-12 June 2010, Depok Indonesia. http://www.ee.ui.ac.id/immac2010/ |
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Q Science (General) Othman , A. R Hamidon , A. H Abdul Wasli., C, Ting, J. T. H, Mustaffa , M. F 5.8 GHz Radio Frequency Amplifier with 3 dB Π Network Attenuator |
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This paper presents a design of radio frequency amplifier (RFA), which operates at 5.8 GHz frequency for WiMAX application. The RFA designed used T matching network consist of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contributes a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth measures is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc. |
format |
Conference or Workshop Item |
author |
Othman , A. R Hamidon , A. H Abdul Wasli., C, Ting, J. T. H, Mustaffa , M. F |
author_facet |
Othman , A. R Hamidon , A. H Abdul Wasli., C, Ting, J. T. H, Mustaffa , M. F |
author_sort |
Othman , A. R |
title |
5.8 GHz Radio Frequency Amplifier with 3 dB Π Network Attenuator |
title_short |
5.8 GHz Radio Frequency Amplifier with 3 dB Π Network Attenuator |
title_full |
5.8 GHz Radio Frequency Amplifier with 3 dB Π Network Attenuator |
title_fullStr |
5.8 GHz Radio Frequency Amplifier with 3 dB Π Network Attenuator |
title_full_unstemmed |
5.8 GHz Radio Frequency Amplifier with 3 dB Π Network Attenuator |
title_sort |
5.8 ghz radio frequency amplifier with 3 db π network attenuator |
publishDate |
2010 |
url |
http://eprints.utem.edu.my/id/eprint/6856/1/5.8_GHz_Radio_Frequency_Amplifier_with_3_dB_Pi_Network_Attenuator_.pdf http://eprints.utem.edu.my/id/eprint/6856/ http://www.ee.ui.ac.id/immac2010/ |
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1665905332609613824 |
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13.160551 |