Wideband 5.8 GHz Radio Frequency Amplifier with 3 dB Π- Network Attenuator Isolation

• Main Authors: Othman , A. R, Hamidon , A. H, Husain , M.N, Johal , M.S, Ibrahim , A.B
• Format: Article
• Language: English
• Published: UTEM 2011
• Subjects: Q Science (General)
• Online Access: http://eprints.utem.edu.my/id/eprint/6789/1/JTEC2011-1.pdf; http://eprints.utem.edu.my/id/eprint/6789/; http://jtec.utem.edu.my

This paper presents a design of radio frequency amplifier (RFA), which operates at 5.8 GHz frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contribute a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth measures is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc.