Optoelectrical properties of treated CdSe thin films with variations in indium chloride concentration

The effect of a nontoxic chloride treatment on the crystallinity and optoelectrical characteristics of a CdSe thin film was studied. A detailed comparative analysis was conducted utilizing four molarities (0.01 M, 0.10 M, 0.15 M, and 0.20 M) of indium (III) chloride (InCl3), where the results showed...

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Main Authors: Doroody, Camellia, Rosly, Hasrul Nisham, Harif, Muhammad Najib, Mohamad, Ili Salwani, Isah, Mustapha, Amin, Nowshad
Format: Article
Language:English
Published: MDPI 2023
Online Access:http://eprints.utem.edu.my/id/eprint/27192/2/0173202012024674.PDF
http://eprints.utem.edu.my/id/eprint/27192/
https://www.mdpi.com/1996-1944/16/11/4108
https://doi.org/10.3390/ma16114108
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spelling my.utem.eprints.271922024-06-26T12:42:45Z http://eprints.utem.edu.my/id/eprint/27192/ Optoelectrical properties of treated CdSe thin films with variations in indium chloride concentration Doroody, Camellia Rosly, Hasrul Nisham Harif, Muhammad Najib Mohamad, Ili Salwani Isah, Mustapha Amin, Nowshad The effect of a nontoxic chloride treatment on the crystallinity and optoelectrical characteristics of a CdSe thin film was studied. A detailed comparative analysis was conducted utilizing four molarities (0.01 M, 0.10 M, 0.15 M, and 0.20 M) of indium (III) chloride (InCl3), where the results showed a notable improvement in CdSe properties. The crystallite size of treated CdSe samples increased from 31.845 nm to 38.819 nm, and the strain in treated films dropped from 4.9 × 10−3 to 4.0 × 10−3, according to XRD measurements. The highest crystallinity resulted from the 0.10 M InCl3-treated CdSe films. The In contents in the prepared samples were verified by compositional analysis, and FESEM images from treated CdSe thin films demonstrated compact and optimal grain arrangements with passivated grain boundaries, which are required for the development of a robust operational solar cell. The UV-Vis plot, similarly, showed that the samples were darkened after treatment and the band gap of 1.7 eV for the as-grown samples fell to roughly 1.5 eV. Furthermore, the Hall effect results suggested that the carrier concentration increased by one order of magnitude for samples treated with 0.10 M of InCl3, but the resistivity remained in the order of 103 ohm/cm2, suggesting that the indium treatment had no considerable effect on resistivity. Hence, despite the deficit in the optical results, samples treated at 0.10 M InCl3 showed promising characteristics as well as the viability of treatment with 0.10 M InCl3 as an alternative to standard CdCl2 treatment. MDPI 2023-05 Article PeerReviewed text en http://eprints.utem.edu.my/id/eprint/27192/2/0173202012024674.PDF Doroody, Camellia and Rosly, Hasrul Nisham and Harif, Muhammad Najib and Mohamad, Ili Salwani and Isah, Mustapha and Amin, Nowshad (2023) Optoelectrical properties of treated CdSe thin films with variations in indium chloride concentration. Materials, 16 (11). pp. 1-12. ISSN 1996-1944 https://www.mdpi.com/1996-1944/16/11/4108 https://doi.org/10.3390/ma16114108
institution Universiti Teknikal Malaysia Melaka
building UTEM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknikal Malaysia Melaka
content_source UTEM Institutional Repository
url_provider http://eprints.utem.edu.my/
language English
description The effect of a nontoxic chloride treatment on the crystallinity and optoelectrical characteristics of a CdSe thin film was studied. A detailed comparative analysis was conducted utilizing four molarities (0.01 M, 0.10 M, 0.15 M, and 0.20 M) of indium (III) chloride (InCl3), where the results showed a notable improvement in CdSe properties. The crystallite size of treated CdSe samples increased from 31.845 nm to 38.819 nm, and the strain in treated films dropped from 4.9 × 10−3 to 4.0 × 10−3, according to XRD measurements. The highest crystallinity resulted from the 0.10 M InCl3-treated CdSe films. The In contents in the prepared samples were verified by compositional analysis, and FESEM images from treated CdSe thin films demonstrated compact and optimal grain arrangements with passivated grain boundaries, which are required for the development of a robust operational solar cell. The UV-Vis plot, similarly, showed that the samples were darkened after treatment and the band gap of 1.7 eV for the as-grown samples fell to roughly 1.5 eV. Furthermore, the Hall effect results suggested that the carrier concentration increased by one order of magnitude for samples treated with 0.10 M of InCl3, but the resistivity remained in the order of 103 ohm/cm2, suggesting that the indium treatment had no considerable effect on resistivity. Hence, despite the deficit in the optical results, samples treated at 0.10 M InCl3 showed promising characteristics as well as the viability of treatment with 0.10 M InCl3 as an alternative to standard CdCl2 treatment.
format Article
author Doroody, Camellia
Rosly, Hasrul Nisham
Harif, Muhammad Najib
Mohamad, Ili Salwani
Isah, Mustapha
Amin, Nowshad
spellingShingle Doroody, Camellia
Rosly, Hasrul Nisham
Harif, Muhammad Najib
Mohamad, Ili Salwani
Isah, Mustapha
Amin, Nowshad
Optoelectrical properties of treated CdSe thin films with variations in indium chloride concentration
author_facet Doroody, Camellia
Rosly, Hasrul Nisham
Harif, Muhammad Najib
Mohamad, Ili Salwani
Isah, Mustapha
Amin, Nowshad
author_sort Doroody, Camellia
title Optoelectrical properties of treated CdSe thin films with variations in indium chloride concentration
title_short Optoelectrical properties of treated CdSe thin films with variations in indium chloride concentration
title_full Optoelectrical properties of treated CdSe thin films with variations in indium chloride concentration
title_fullStr Optoelectrical properties of treated CdSe thin films with variations in indium chloride concentration
title_full_unstemmed Optoelectrical properties of treated CdSe thin films with variations in indium chloride concentration
title_sort optoelectrical properties of treated cdse thin films with variations in indium chloride concentration
publisher MDPI
publishDate 2023
url http://eprints.utem.edu.my/id/eprint/27192/2/0173202012024674.PDF
http://eprints.utem.edu.my/id/eprint/27192/
https://www.mdpi.com/1996-1944/16/11/4108
https://doi.org/10.3390/ma16114108
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score 13.160551