Design and electrical simulation of a 22nm MOSFET with graphene bilayer channel using double high-k metal gate
This paper will discuss the virtual fabrication design process of a 22nm MOSFET bilayer graphene with high-ĸ metal gate (HKMG). Silvaco software's TCAD fabrication tools were utilized, with the Athena simulation module used to construct the device design and the Atlas module used to describe th...
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| Main Authors: | , , , |
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| 格式: | Article |
| 语言: | English |
| 出版: |
Universiti Malaysia Perlis
2022
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| 在线阅读: | http://eprints.utem.edu.my/id/eprint/26312/2/IJNEAM2021032_Final_pr_Verified.pdf http://eprints.utem.edu.my/id/eprint/26312/ https://ijneam.unimap.edu.my/images/PDF/ijneam%20apr%202022%20pdf/IJNEAM2021032_Final_pr_Verified.pdf |
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