Effects Of Doping Concentration And Annealing Temperature On Indium Doped Zinc Oxide Particles Prepared Via Sol-Gel Method

Doping of indium in zinc oxide (ZnO) is one of the means to increase its electrical conductivity. This study focuses on investigating the effects of indium doping concentration (In/Zn = 3%, 5% and 7%) and annealing temperature (200°C, 300°C and 450°C) on the electrical conductivity, structural, mor...

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Bibliographic Details
Main Authors: Abd Manaf, Mohd Edeerozey, Abdullah Sani, Nurhernida, Ahsan, Qumrul, Wan Omar, Wan Mohamad Syarifudin, Mohamad Yatim, Norazlina, Yaakob, Mohd Yuhazri
Format: Article
Language:English
Published: Microscopy Society of Malaysia 2020
Online Access:http://eprints.utem.edu.my/id/eprint/25242/2/2.3.1.2%20-%202020%20-%20Nurhernida%20Abdullah%20Sani%2C%20Mohd%20Edeerozey%20Abd%20Manaf%2C%20Qumrul%20Ahsan%2C%20Wan%20Mohamad%2C%20Syarifudin%20Wan%20Omar%2C%20Mohd%20Yuhazri%20Yaakob%20and%20Norazlina%20Mohamad%20Yatim%2C%20Effects%20of%20Doping%20Concentration%20a.pdf
http://eprints.utem.edu.my/id/eprint/25242/
https://malaysianjournalofmicroscopy.org/ojs/index.php/mjm/article/view/442/239
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