Electro synthesized MoTe2 thin films and their semiconductor studies towards photoelectrochemical cell
Transition metal chalcogenide molybdenum ditelluride (MoTe2) thin films have been electrosynthesized cathodically on indium tin oxide-coated (ITO) conducting glass substrates from ammonaical solution of H2MoO4 and TeO2. The electrode potential was varied while the bath temperature was maintained at...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Trans Tech Publications
2014
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/14771/1/34_AMR.845.pdf http://eprints.utem.edu.my/id/eprint/14771/ http://www.scientific.net/AMR |
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| Summary: | Transition metal chalcogenide molybdenum ditelluride (MoTe2) thin films have been electrosynthesized cathodically on indium tin oxide-coated (ITO) conducting glass substrates from ammonaical solution of H2MoO4 and TeO2. The electrode potential was varied while the bath temperature was maintained at 40±1 ºC and deposition time of 30 minutes. Highly textured MoTe2 films with polycrystalline nature are observed by X-ray diffraction analysis. Compositional analysis by EDX gives their stoichiometric relationships. Scanning electron microscope (SEM) was used to study surface morphology and shows that the films are smooth, uniform and useful for device fabrication. The optical absorption spectra showed that the material has an indirect band-gap value of 1.91-2.04 eV with different electrode potential. Besides, the film exhibited p-type semiconductor behavior. |
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