Compatibility Analysis of Silicon Nitride and Silicon Dioxide on HCI induced LDD MOSFET

• Main Authors: Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof, Norhayati binti Soin, N.Soin, Nissar, Nissar M.K., Sufyan, M.Sufyan, Faiz bin Arith, Faiz Arith
• Format: Article
• Language: English
• Published: American-Eurasian Networks for Scientific Informations (AENSI) 2014
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utem.edu.my/id/eprint/14003/1/Compatibility_Analysis_of_Silicon_Nitride_and_Silicon_Dioxide_on_HCI_induced_LDD_MOSFET.pdf; http://eprints.utem.edu.my/id/eprint/14003/; http://www.ajbasweb.com/

Hot-carrier-injection (HCI) is one of important reliability issue under short-channel effect in modern MOSFET devices especially in nano-scaled CMOS technology circuits. The effect of the hot carrier can be reduced by introducing Lightly-Doped-Drain (LDD) structure on the device. The objective of th...