Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide
This paper highlights the study of the carrier injection mode and the carrier depletion mode of the phase modulator. The phase modulator device has been integrated in the silicon rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D sem...
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Main Authors: | , , , , |
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Format: | Conference or Workshop Item |
Language: | English |
Published: |
2010
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Subjects: | |
Online Access: | http://eprints.utem.edu.my/id/eprint/13080/1/isce_mar.pdf http://eprints.utem.edu.my/id/eprint/13080/ |
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Summary: | This paper highlights the study of the carrier injection
mode and the carrier depletion mode of the phase modulator. The
phase modulator device has been integrated in the silicon rib
waveguide by using the p-i-n diode structure. The electrical
device performance is predicted by using the 2-D semiconductor
package SILVACO (CAD) software under DC operation.
Summarily, the phase modulator device has less sensitivity to the
effective refractive index changes when operating in reverse
biased or depletion mode compared to the forward biased or
injection mode. |
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