Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb].
Bahan hablur nano berjalur tenaga terus dan tak terus (poros silicon, PS dan poros GaAs, π-GaAs) telah difabrikasi dan ciri-ciri optic mereka telah dikaji dengan mendalam. Indirect and direct band gap nanocrystalline materials (porous silicon, PS and porous GaAs, π-GaAs) have been fabricated and...
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| Format: | Thesis |
| Language: | English |
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2008
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| Online Access: | http://eprints.usm.my/9893/1/FABRICATION_AND_CHARACTERIZATION_OF.pdf http://eprints.usm.my/9893/ |
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| Summary: | Bahan hablur nano berjalur tenaga terus dan tak terus (poros silicon, PS dan poros GaAs, π-GaAs) telah difabrikasi dan ciri-ciri optic mereka telah dikaji dengan mendalam.
Indirect and direct band gap nanocrystalline materials (porous silicon, PS and porous GaAs, π-GaAs) have been fabricated and their optical properties were extensively studied. In this work, two approaches to manufacture these materials are employed.
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