Analog Structural Modeling Of Resonant Tunneling Diode Using Ltspice

• Main Author: Zaharimying, Wan Nurnabilah
• Format: Monograph
• Language: English
• Published: Universiti Sains Malaysia 2017
• Subjects: T Technology; TK1-9971 Electrical engineering. Electronics. Nuclear engineering
• Online Access: http://eprints.usm.my/52879/1/Analog%20Structural%20Modeling%20Of%20Resonant%20Tunneling%20Diode%20Using%20Ltspice_Wan%20Nurnabilah%20Zaharimying_E3_2017.pdf; http://eprints.usm.my/52879/

In this research, the material InGaAs/AlAs and GaAs/AlAs are used as the material for the double barriers resonant tunneling diode (RTD). RTD is the fastest electronic device to date. RTD consists of a quantum well sandwiched in between two thin barriers InGaAs/AlAs and GaAs/AlAs. Both ends are term...