A Study Of Capacitance-Voltage Characteristics For Metal-Oxidesemiconductor Structure On Goldcompensated High Resistivity Silicon

• Main Author: Tan, Jia Yiing
• Format: Monograph
• Language: English
• Published: Universiti Sains Malaysia 2017
• Subjects: T Technology; TK1-9971 Electrical engineering. Electronics. Nuclear engineering
• Online Access: http://eprints.usm.my/52870/1/A%20Study%20Of%20Capacitance-Voltage%20Characteristics%20For%20Metal-Oxidesemiconductor%20Structure%20On%20Goldcompensated%20High%20Resistivity%20Silicon_Tan%20Jia%20Yiing_E3_2017.pdf; http://eprints.usm.my/52870/

The goal to achieve low microwave attenuation loss in a high-speed wireless communication system is crucial for the advancement of technology evolution. Background carrier and parasitic surface conduction hinder the progression of a wireless system to perform better. Recently, a new method using...