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Thin Film Undoped And P-Doped GaN As Sensor

A GaN thin film based sensor is demonstrated for sensing detection. The GaN thin film was grown on a sapphire substrate by using Metal Organic Chemical Vapour Deposition (MOCVD). An undoped and p-doped GaN thin film were used to investigate their reaction upon exposure. The interaction between the...

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Main Authors: Nashaain, N. M., Syamsul, M., Abdalmohammed, S. A. A., Nor, M. Nuzaihan Md.
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
QC1-999 Physics
Online Access:http://eprints.usm.my/49100/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2081.pdf
http://eprints.usm.my/49100/
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spelling my.usm.eprints.49100 http://eprints.usm.my/49100/ Thin Film Undoped And P-Doped GaN As Sensor Nashaain, N. M. Syamsul, M. Abdalmohammed, S. A. A. Nor, M. Nuzaihan Md. QC1-999 Physics A GaN thin film based sensor is demonstrated for sensing detection. The GaN thin film was grown on a sapphire substrate by using Metal Organic Chemical Vapour Deposition (MOCVD). An undoped and p-doped GaN thin film were used to investigate their reaction upon exposure. The interaction between the GaN surface and molecules, and the sensing mechanism were inspected. It was found that the electrical resistance of semiconducting GaN thin film decreases as time increases. The Undoped GaN (U1) demonstrates good sensitivity, stability and low resistivity by increasing time compare to other samples. 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/49100/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2081.pdf Nashaain, N. M. and Syamsul, M. and Abdalmohammed, S. A. A. and Nor, M. Nuzaihan Md. (2020) Thin Film Undoped And P-Doped GaN As Sensor. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Nashaain, N. M.
Syamsul, M.
Abdalmohammed, S. A. A.
Nor, M. Nuzaihan Md.
Thin Film Undoped And P-Doped GaN As Sensor
description A GaN thin film based sensor is demonstrated for sensing detection. The GaN thin film was grown on a sapphire substrate by using Metal Organic Chemical Vapour Deposition (MOCVD). An undoped and p-doped GaN thin film were used to investigate their reaction upon exposure. The interaction between the GaN surface and molecules, and the sensing mechanism were inspected. It was found that the electrical resistance of semiconducting GaN thin film decreases as time increases. The Undoped GaN (U1) demonstrates good sensitivity, stability and low resistivity by increasing time compare to other samples.
format Conference or Workshop Item
author Nashaain, N. M.
Syamsul, M.
Abdalmohammed, S. A. A.
Nor, M. Nuzaihan Md.
author_facet Nashaain, N. M.
Syamsul, M.
Abdalmohammed, S. A. A.
Nor, M. Nuzaihan Md.
author_sort Nashaain, N. M.
title Thin Film Undoped And P-Doped GaN As Sensor
title_short Thin Film Undoped And P-Doped GaN As Sensor
title_full Thin Film Undoped And P-Doped GaN As Sensor
title_fullStr Thin Film Undoped And P-Doped GaN As Sensor
title_full_unstemmed Thin Film Undoped And P-Doped GaN As Sensor
title_sort thin film undoped and p-doped gan as sensor
publishDate 2020
url http://eprints.usm.my/49100/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2081.pdf
http://eprints.usm.my/49100/
_version_ 1699238019036348416
score 13.18916

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