Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted Electrochemical Etching Technique

• Main Authors: Sohimee, Siti Nurfarhana, Hassan, Zainuriah, Ahmed, Naser M., Radzali, Rosfariza, Way, Foong Lim
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: QC1-999 Physics
• Online Access: http://eprints.usm.my/49067/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2061.pdf; http://eprints.usm.my/49067/

The Theoretical And Experimental Study Of Porous P-Type Gallium Nitride (Gan) Is Discussed In This Work. Porous P-Type Gan Was Adequately Fabricated Using Alternating Current Photo-Assisted Electrochemical Etching Technique With Various Etching Times (10, 20, 30, And 60 Minutes) In Mixed Hydrofluori...