Development Of InGan Based Thin Film Solar Cells Present Status And Challenges

• Main Authors: Hamady, Sidi Ould Saad, Yusof, Ahmad Sauffi, Bose, Sourav, Chevallier, Christyves, Fressengeas, Nicolas, Kieffer, Queny, Hassan, Zainuriah, Anas, Mohd Anas, Way, Foong Lim, Ng, Sha Shiong
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: QC1-999 Physics
• Online Access: http://eprints.usm.my/49037/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut.pdf; http://eprints.usm.my/49037/

The Indium Gallium Nitride (InGaN) alloy has the required potentialities to be a material of choice used in the next generation high efficiency solar cells. Indeed, the mere change in its Indium composition allows its absorption to cover the whole solar spectrum. The other main advantages of InGaN,...