Catalyst-free Growth of ZnOnanoleaves on ZnOseed layer/glassby Thermal Evaporation Method: Effects of Carrier Gas Flow Rate
Here, we report for the first time the catalyst-free growth of ZnOnanoleaf on a glass substrate via thermal evaporation method.These nanoleaveswere grown on (75 ± 5 nm) ZnOseed layers, which were deposited on glass substrates by radio frequency (RF) magnetron sputtering. Prior to synthesized ZnOnano...
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my.usm.eprints.48833 http://eprints.usm.my/48833/ Catalyst-free Growth of ZnOnanoleaves on ZnOseed layer/glassby Thermal Evaporation Method: Effects of Carrier Gas Flow Rate Aisultany, Forat H. Hassan, Z. Ahmed, Naser M. QC1-999 Physics Here, we report for the first time the catalyst-free growth of ZnOnanoleaf on a glass substrate via thermal evaporation method.These nanoleaveswere grown on (75 ± 5 nm) ZnOseed layers, which were deposited on glass substrates by radio frequency (RF) magnetron sputtering. Prior to synthesized ZnOnanoleaves, the sputtered ZnOseeds were annealed using the continuous wave (CW) C02 laser at 450 oc in air for 15 min. The effects of carrier gas flow rate on the morphological, structural, and optical properties were systematically studied using field emission scanning electron microscopy, X-ray diffraction and UV-Vis spectroscopy. The objective of the present study was achieved by obtaining ZnOnanoleavesand obtains the optimized parameters for the control of different morphologies of these nanoleaves. 2017-11-16 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48833/1/ZH17_OP08.pdf%20done.pdf Aisultany, Forat H. and Hassan, Z. and Ahmed, Naser M. (2017) Catalyst-free Growth of ZnOnanoleaves on ZnOseed layer/glassby Thermal Evaporation Method: Effects of Carrier Gas Flow Rate. In: 6th International Conference on Solid State Science and Technology (ICSSST) 2017 & Workshop and Advanced Materials Technology : Growth and characterization. |
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QC1-999 Physics Aisultany, Forat H. Hassan, Z. Ahmed, Naser M. Catalyst-free Growth of ZnOnanoleaves on ZnOseed layer/glassby Thermal Evaporation Method: Effects of Carrier Gas Flow Rate |
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Here, we report for the first time the catalyst-free growth of ZnOnanoleaf on a glass substrate via thermal evaporation method.These nanoleaveswere grown on (75 ± 5 nm) ZnOseed layers, which were deposited on glass substrates by radio frequency (RF) magnetron sputtering. Prior to synthesized ZnOnanoleaves, the sputtered ZnOseeds were annealed using the continuous wave (CW) C02 laser at 450 oc in air for 15 min. The effects of carrier gas flow rate on the morphological, structural, and optical properties were systematically studied using field emission scanning electron microscopy, X-ray diffraction and UV-Vis spectroscopy. The objective of the present study was achieved by obtaining ZnOnanoleavesand obtains the optimized parameters for the control of different morphologies of these nanoleaves. |
format |
Conference or Workshop Item |
author |
Aisultany, Forat H. Hassan, Z. Ahmed, Naser M. |
author_facet |
Aisultany, Forat H. Hassan, Z. Ahmed, Naser M. |
author_sort |
Aisultany, Forat H. |
title |
Catalyst-free Growth of ZnOnanoleaves on ZnOseed layer/glassby Thermal Evaporation Method: Effects of Carrier Gas Flow Rate |
title_short |
Catalyst-free Growth of ZnOnanoleaves on ZnOseed layer/glassby Thermal Evaporation Method: Effects of Carrier Gas Flow Rate |
title_full |
Catalyst-free Growth of ZnOnanoleaves on ZnOseed layer/glassby Thermal Evaporation Method: Effects of Carrier Gas Flow Rate |
title_fullStr |
Catalyst-free Growth of ZnOnanoleaves on ZnOseed layer/glassby Thermal Evaporation Method: Effects of Carrier Gas Flow Rate |
title_full_unstemmed |
Catalyst-free Growth of ZnOnanoleaves on ZnOseed layer/glassby Thermal Evaporation Method: Effects of Carrier Gas Flow Rate |
title_sort |
catalyst-free growth of znonanoleaves on znoseed layer/glassby thermal evaporation method: effects of carrier gas flow rate |
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2017 |
url |
http://eprints.usm.my/48833/1/ZH17_OP08.pdf%20done.pdf http://eprints.usm.my/48833/ |
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1696977057185005568 |
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13.211869 |