Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current photo-assisted Electrochemical Etching (ACPEC) Technique

• Main Authors: Sohimee, Siti Nurfarhana, Hassan, Zainuriah, Ahmed, Naser Mahmoud, Lim, Way Foong, Quah, Hock Jin
• Format: Conference or Workshop Item
• Language: English
• Published: 2017
• Subjects: QC1-999 Physics
• Online Access: http://eprints.usm.my/48823/1/ZH17_OP02_1.pdf%20done.pdf; http://eprints.usm.my/48823/; https://iopscience.iop.org/article/10.1088/1742-6596/1083/1/012034/pdf

Alternating current photo-assisted electrochemical etching (ACPEC) process was used to produce the formation of porous silicon with different ultra-violet(UV) light intensity. The study aims to investigate the effect of different UV light illumination on the properties of porous silicon. The surface of n-type silicon (111) was selectively etched in the HF and ethanol solution with ratio (5:20) for 30 minutes under different UV lamp intensity; 40%, 50% and 60%. The samples were characterized by using field emission scanning electron microscope (FESEM), atomic force microscopy (AFM) and high resolution X-ray diffraction (HR-XRD).