Effects of Withdrawal Speed on the Synthesis of GaN Thin Films by Dip Coating Method
ln this research, hexagonal wurtzite structure gallium nitride (GaN) thin films were grown on aluminium nitride on silicon substrate [AIN/Si( I I I)] substrate by using sol-gel dip coating deposition method. The effects of the withdrawal speed on the strucutural and surface morphology of the synthes...
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| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48775/1/NG1.pdf%20done.pdf http://eprints.usm.my/48775/ |
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