GaAs PHEMT single-ended mixers for 28 GHz applications
Mixers are key devices for front-end components in any transceiver of a communication system. The performance of a receiver rely heavily on the mixer operation in terms of its conversion loss (gain), noise figure, port-to-port isolation, intermodulation distortion and dynamic range. Microwave mixer...
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Penerbit Universiti Sains Malaysia
2004
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my.usm.eprints.43401 http://eprints.usm.my/43401/ GaAs PHEMT single-ended mixers for 28 GHz applications Rahman, Nuriha Abd Majlis, Burhanuddin Yeop Q179.9-180 Research Mixers are key devices for front-end components in any transceiver of a communication system. The performance of a receiver rely heavily on the mixer operation in terms of its conversion loss (gain), noise figure, port-to-port isolation, intermodulation distortion and dynamic range. Microwave mixer can be designed by using Schottkybarrier diode or FET, either MESFET or HEMT. Using a FET rather than a diode as the non-linear element in a mixer has several advantages. Some of these include the possibility of achieving a conversion gain, using lower LO drive power and obtaining isolation between the signal ports of the FET Penerbit Universiti Sains Malaysia Ahmad, Abdul Latif Yahya, Ahmad Rahim Mohd. Abdullah, Amirul AI-Ashraf Muhammad, Tengku Sifzizul Tengku 2004 Book Section PeerReviewed application/pdf en http://eprints.usm.my/43401/1/pME07.pdf Rahman, Nuriha Abd and Majlis, Burhanuddin Yeop (2004) GaAs PHEMT single-ended mixers for 28 GHz applications. In: The 4th Annual Seminar of National Science Fellowship NSF 2004 Proceedings. Penerbit Universiti Sains Malaysia, Pulau Pinang, Malaysia, pp. 462-465. |
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Q179.9-180 Research Rahman, Nuriha Abd Majlis, Burhanuddin Yeop GaAs PHEMT single-ended mixers for 28 GHz applications |
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Mixers are key devices for front-end components in any transceiver of a communication system. The performance of a receiver rely heavily on the mixer operation in terms of its conversion loss (gain), noise figure, port-to-port isolation, intermodulation distortion and dynamic range. Microwave mixer can be designed by using Schottkybarrier diode or FET, either MESFET or HEMT. Using a FET rather than a diode as the non-linear element in a mixer has several advantages. Some of these include the possibility of achieving a conversion gain, using lower LO drive power and obtaining isolation between the signal ports of the FET |
author2 |
Ahmad, Abdul Latif |
author_facet |
Ahmad, Abdul Latif Rahman, Nuriha Abd Majlis, Burhanuddin Yeop |
format |
Book Section |
author |
Rahman, Nuriha Abd Majlis, Burhanuddin Yeop |
author_sort |
Rahman, Nuriha Abd |
title |
GaAs PHEMT single-ended mixers for 28 GHz applications |
title_short |
GaAs PHEMT single-ended mixers for 28 GHz applications |
title_full |
GaAs PHEMT single-ended mixers for 28 GHz applications |
title_fullStr |
GaAs PHEMT single-ended mixers for 28 GHz applications |
title_full_unstemmed |
GaAs PHEMT single-ended mixers for 28 GHz applications |
title_sort |
gaas phemt single-ended mixers for 28 ghz applications |
publisher |
Penerbit Universiti Sains Malaysia |
publishDate |
2004 |
url |
http://eprints.usm.my/43401/1/pME07.pdf http://eprints.usm.my/43401/ |
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