Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors

In this thesis, experimental fabrication and theoretical simulation of Ge islands Si based metal-semiconductor-metal photodetectors have been reported. Radio frequency sputtering was used to deposit Ge thin films on silicon substrates. This is followed by rapid thermal annealing to form Ge islands....

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Main Author: Sarmast, Hadi Mahmodi Sheikh
Format: Thesis
Language:English
Published: 2010
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Online Access:http://eprints.usm.my/41822/1/HADI_MAHMODI_SHEIKH_SARMAST.pdf
http://eprints.usm.my/41822/
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spelling my.usm.eprints.41822 http://eprints.usm.my/41822/ Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors Sarmast, Hadi Mahmodi Sheikh QC1 Physics (General) In this thesis, experimental fabrication and theoretical simulation of Ge islands Si based metal-semiconductor-metal photodetectors have been reported. Radio frequency sputtering was used to deposit Ge thin films on silicon substrates. This is followed by rapid thermal annealing to form Ge islands. Not only that the annealing produces Ge islands but also wetting layer. The size and density of the islands are greatly influenced by the annealing time. 2010-11 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/41822/1/HADI_MAHMODI_SHEIKH_SARMAST.pdf Sarmast, Hadi Mahmodi Sheikh (2010) Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors. Masters thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Sarmast, Hadi Mahmodi Sheikh
Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
description In this thesis, experimental fabrication and theoretical simulation of Ge islands Si based metal-semiconductor-metal photodetectors have been reported. Radio frequency sputtering was used to deposit Ge thin films on silicon substrates. This is followed by rapid thermal annealing to form Ge islands. Not only that the annealing produces Ge islands but also wetting layer. The size and density of the islands are greatly influenced by the annealing time.
format Thesis
author Sarmast, Hadi Mahmodi Sheikh
author_facet Sarmast, Hadi Mahmodi Sheikh
author_sort Sarmast, Hadi Mahmodi Sheikh
title Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
title_short Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
title_full Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
title_fullStr Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
title_full_unstemmed Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
title_sort simulation and fabrication of ge islands on si metal-semiconductor-metal photodetectors
publishDate 2010
url http://eprints.usm.my/41822/1/HADI_MAHMODI_SHEIKH_SARMAST.pdf
http://eprints.usm.my/41822/
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score 13.211869